Method of forming buried bit line memory circuitry and semiconductor processing method of forming a conductive line

ABSTRACT

The invention includes methods of forming buried bit line memory circuitry and semiconductor processing methods of forming conductive lines. In but one implementation, a semiconductor processing method of forming a conductive line includes forming a silicon comprising region over a substrate. A TiN x  comprising layer is deposited over the silicon comprising region, where “x” is greater than 0 and less than 1. The TiN x  comprising layer is annealed in a nitrogen and hydrogen plasma atmosphere effective to transform at least an outermost portion of the TiN x  layer over the silicon comprising region to TiN. After the annealing, an elemental tungsten comprising layer if formed on the TiN and at least the elemental tungsten comprising layer, the TiN, and any remaining TiN x  layer is patterned into conductive line. In one implementation, a method such as the above is utilized in the fabrication of buried bit line memory circuitry.

TECHNICAL FIELD

This invention relates to methods of forming buried bit line memorycircuitry and to semiconductor processing methods of forming conductivelines.

BACKGROUND OF THE INVENTION

Semiconductor circuitry fabrication is ever attempting to make denserand smaller circuit components. One type of circuitry where this isoccurring is in the design and fabrication of memory circuitry, forexample in buried bit line memory circuitry. One type of memorycircuitry employing buried bit line architecture is dynamic randomaccess memory (DRAM). Such circuitry typically includes a series of bitlines and word lines wherein at least a majority portion of thecapacitors are formed elevationally above or outwardly of the bit lines.

A parasitic capacitance between buried digit lines becomes increasinglyproblematic as circuitry density becomes greater and circuitrycomponents become smaller. Accordingly, alternate designs and materialsare being considered for fabrication of the digit lines in highly densecircuitry fabrication, for example at and below 0.18 micron digit linewidth.

The invention was motivated from a desire to improve fabrication methodsand constructions associated with buried bit line circuitry, andparticularly buried bit line DRAM circuitry. However, the artisan willappreciate applicability of the invention to other circuitry fabricationmethods and structures, with the invention only being limited by theaccompanying claims appropriately interpreted in accordance with thedoctrine of equivalents.

SUMMARY

The invention includes methods of forming buried bit line memorycircuitry and semiconductor processing methods of forming conductivelines. In but one implementation, a semiconductor processing method offorming a conductive line includes forming a silicon comprising regionover a substrate. A TiN_(x) comprising layer is deposited over thesilicon comprising region, where “x” is greater than 0 and less than 1.The TiN_(x) comprising layer is annealed in a nitrogen and hydrogenplasma atmosphere effective to transform at least an outermost portionof the TiN_(x) layer over the silicon comprising region to TiN. Afterthe annealing, an elemental tungsten comprising layer if formed on theTiN and at least the elemental tungsten comprising layer, the TiN, andany remaining TiN_(x) layer is patterned into conductive line. In oneimplementation, a method such as the above is utilized in thefabrication of buried bit line memory circuitry.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a top diagrammatic view of a buried bit line DRAM array inaccordance with but one aspect of the invention.

FIG. 2 is a sectional view of FIG. 1 taken through line X2-X3 at oneprocessing step in accordance with an aspect of the invention.

FIG. 3 is a sectional view of FIG. 1 taken through line X1-X4 at thesame sequence in processing as FIG. 2.

FIG. 4 is a view of the FIG. 2 wafer fragment at a processing stepsubsequent to that depicted by FIG. 2.

FIG. 5 is a view of the FIG. 3 wafer fragment at a processing stepsubsequent to that depicted by FIG. 3 and corresponding in sequence withthat depicted by FIG. 4.

FIG. 6 is a view of the FIG. 4 wafer fragment at a processing stepsubsequent to that depicted by FIG. 4.

FIG. 7 is a view of the FIG. 5 wafer fragment at a processing stepsubsequent to that depicted by FIG. 5 and corresponding in sequence tothat depicted by FIG. 6.

FIG. 8 is an alternate embodiment wafer fragment corresponding insection and sequence to that depicted by FIG. 6.

FIG. 9 is a view of the alternate embodiment wafer fragmentcorresponding in section and sequence to that depicted by FIG. 7.

FIG. 10 is a view of the FIG. 6 wafer fragment at a processing stepsubsequent to that depicted by FIG. 6.

FIG. 11 is a view of the FIG. 7 wafer fragment at a processing stepcorresponding to that depicted by FIG. 10.

FIG. 12 is a view of the alternate embodiment wafer fragmentcorresponding in section and sequence to that depicted by FIG. 10.

FIG. 13 is a view of the alternate embodiment wafer fragmentcorresponding in section and sequence to that depicted by FIG. 11.

FIG. 14 is a view of the FIG. 10 wafer fragment at a processing stepsubsequent to that depicted by FIG. 10.

FIG. 15 is a view of the FIG. 11 wafer fragment at a processing stepsubsequent to that depicted by FIG. 11 and corresponding to thatdepicted by FIG. 14.

FIG. 16 is a view of the alternate embodiment wafer fragmentcorresponding in section and sequence to that depicted by FIG. 14.

FIG. 17 is a view of the alternate embodiment wafer fragmentcorresponding in section and sequence to that depicted by FIG. 15.

FIG. 18 is a view of the FIG. 14 wafer fragment at a processing stepsubsequent to that depicted by FIG. 14.

FIG. 19 is a view of the alternate embodiment wafer fragmentcorresponding in section and sequence to that depicted by FIG. 18.

FIG. 20 is a view of the FIG. 19 alternate embodiment wafer fragment ata processing step subsequent to that depicted by FIG. 19.

FIG. 21 is a view of the FIG. 20 wafer fragment at a processing stepsubsequent to that depicted by FIG. 20.

FIG. 22 is an alternate embodiment view of the FIG. 20 wafer fragment atan alternate processing step to that depicted by FIG. 21.

FIG. 23 is a perspective view of a processing reactor, with a portionbroken away for clarity, utilizable in accordance with one of theprocessing steps depicted in other figures.

FIG. 24 is an elevational schematic view of one aspect of processing inaccordance with a preferred embodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

A method of forming buried bit line memory circuitry is described inconjunction with but one exemplary embodiment of forming DRAM buried bitline memory circuitry as depicted in top plan view in FIG. 1. Alternateburied bit line DRAM circuitry, and alternate buried bit line memorycircuitry are of course contemplated. The description proceeds withreference to two exemplary preferred embodiments. One of the embodimentssequentially progresses with description relative to FIGS. 2-7, FIG. 10,FIG. 11, FIG. 14, FIG. 15, and FIG. 18. An alternate embodiment is shownand described with reference to FIGS. 2-5, FIG. 8, FIG. 9, FIG. 12, FIG.13, FIG. 16, FIG. 17, and FIG. 19. Subsequent exemplary processing inaccordance with but one aspect of the invention proceeds relative tosubsequent processing of the FIG. 19 embodiment in FIG. 20. Twoexemplary alternate processings subsequent to FIG. 20 are shown in FIGS.21 and 22. The alternate embodiment depictions in FIG. 8, FIG. 9, FIG.12, FIG. 13, FIG. 16, FIG. 17, and FIG. 19 utilize the same numerals fortheir corresponding figures, with differences being indicated with thesuffix “a” or with different numerals. Alternate embodiments are ofcourse contemplated.

Referring initially to FIGS. 1-3, a semiconductor wafer fragment isindicated generally with reference numeral 10. Such comprises a bulkmonocrystalline silicon substrate 12 and shallow trench field isolationregions 14. In the context of this document, the term “semiconductorsubstrate” or “semiconductive substrate” is defined to mean anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductive substratesdescribed above. Wafer fragment 10 includes word line constructions 15,16, 17, and 18. Each is depicted as being comprised of a gate dielectricregion, a conductively doped polysilicon region on the gate dielectricregion, a conductive silicide region on the polysilicon region, aninsulating cap on the silicide region, and insulative anisotropicallyetched sidewall spacers. Such components are merely exemplary and notdepicted with numerals.

A series of source/drain diffusion regions 19, 20 and 21 are receivedproximate the illustrated word lines. Regions 19 and 21 in the exemplaryembodiment will constitute storage node contacts for respectivecapacitors, while source/drain region 20 will constitute a bit nodecontact. Accordingly, and by way of example only, word line 16 can beconsidered as having or being associated with a pair of opposingsource/drain regions 19 and 20, and word line construction 17 can beconsidered as having or being associated with a pair of opposingsource/drain regions 20 and 21.

Referring to FIGS. 4 and 5, an insulating layer 22 is deposited over theword lines and source/drain regions. A contact opening 23 has beenformed therethrough to source/drain region 20, filled with a conductiveplugging material 24, and preferably planarized back as shown. Anexemplary and preferred material for layer 22 is borophosphosilicateglass (BPSG). Plug 24 preferably comprises conductively doped silicon,and more preferably conductively doped polysilicon. Diffusion barrierlayers and/or adhesion layers might also constitute a part of plug 24,if desired. Accordingly, such depicts but one example of forming apolysilicon comprising plug 24 in electrical connection with asource/drain diffusion region 20 through an insulating layer 22. In thecontext of this particular embodiment, plug 24 can be considered as asilicon comprising region in electrical connection with source/drainregion 20.

Referring to FIGS. 6 and 7, an HF preclean dip is preferably conductedbefore a TiN_(x) comprising layer 26 is deposited over insulating layer22 and silicon comprising region/polysilicon comprising plug 24, where“x” is greater than 0 and less than 1. Preferably, x ranges from 0.2 to0.8, and even more preferably from 0.5 to 0.6. One preferred way offorming the TiN_(x) is as described in our co-pending U.S. patentapplication Ser. No. 09/026,104, filed on Feb. 19, 1998, and entitled“Asymmetric, Double-Sided Self-Aligned Silicide and Method of Formingthe Same” having Yongjun Jeff Hu as the inventor. Another preferredmethod of forming TiN_(x) layer 26 is shown and described with referenceto FIGS. 23 and 24 utilizing a sputter deposition reactor 176. FIG. 23depicts a broken perspective view of an exemplary process in reactor 176emphasizing preferred inductive coil positioning, with other reactorcomponents not being depicted for clarity. FIG. 24 diagrammaticallydepicts operation of the exemplary reactor of FIG. 23 showing target,wafer, inductive coil, and plasma generation as will now be morespecifically described.

Sputtering reactor 176 includes an inductive coil 178 mounted within areactor chamber 177. A preferred sputter deposition system is aMagnatron System available from Applied Materials as an Ion Metal Plasma(IMP) Reactor™. Such is capable of retaining and DC biasing a target 180and an RF₂ biased substrate (FIG. 24), such as for example substrate 10.In a preferred method of forming a layer 26, a nitrogen containingsource gas and a sputtering gas are fed to reactor chamber 177. Thereactor is operated during such feeding to provide a selected targetpower, inductive coil power, and substrate bias to deposit TiN_(x)comprising layer 26 onto substrate 10. Using the IMP reactor, exemplaryoperable ranges include a substrate bias (RF₂) from 0 W (neutral) to1000 W, an inductive coil power (RF₁) from 1.0 kW to 5.0 kW, and atarget power (DC) of from 1.0 kW to 5.0 kW. A preferred nitrogencontaining source gas is N₂, with a preferred sputtering gas being anoble gas, such as Ar.

Preferred reactor temperature ranges for the processing as depicted inFIG. 24 are from room temperature to 250° C. for backside temperature,and preferably from about 10 mTorr to about 30 mTorr. Preferred RF₂ biasis from 300 W to 500 W. A largely magnatron plasma 184 forms near target180 for sputtering material therefrom, with inductive coil 178 resultingin formation of a gas plasma 182 therebeneath. A high electric field orself-bias develops in the boundary layer or sheath between the plasmaand the substrate which accelerates the metal ions towards the substratein a vector generally perpendicular to the wafer surface, particularlyfor increasing RF₂ bias values.

In the preferred example, gas plasma 182/184 as generated within reactorchamber 77 extends entirely between at least a portion of target 180 anda portion of substrate 10, resulting in deposition of layer 26 asdiagrammatically shown in FIG. 24. A specific example using the IMPreactor comprises a DC target power of 2.0 kW, RF₁ at 2.8 kW, RF₂ at 0 Wwith argon and nitrogen flows at 30 and 40 sccm, respectively. Apreferred thickness for layer 26 is from 150 Angstroms to 300 Angstroms.

FIGS. 8 and 9 illustrate alternate exemplary processing in connectionwith a semiconductor wafer fragment 10 a. Wafer fragment 10 a differsfrom that depicted by FIGS. 6 and 7 in deposition of a polysiliconcomprising layer 25 over insulating layer 22 and polysilicon comprisingplug 24. Accordingly in the FIGS. 8 and 9 depicted embodiment,polysilicon layer 25 and polysilicon plug 24 constitute an exemplarysilicon comprising region formed over and in electrical connection withsource/drain diffusion region 20. An example thickness for layer 25 isfrom 500 Angstroms to 1000 Angstroms. Alternately or in addition, thecombined thickness of layers 25 and 26 a preferably correspond to thetotal thickness of layer 26 in the FIGS. 6 and 7 embodiment. Furtherpreferably, layers 25 and 26 a are deposited to be roughly the samethickness.

Referring to FIGS. 10 and 11, TiN_(x) comprising layer 26 in oneimplementation is annealed in a nitrogen containing atmosphere (with orwithout plasma) effective to transform at least an outermost portion ofTiN_(x) layer 26 over silicon comprising region 24 to stoichiometric TiNmaterial 28. Further preferably, such annealing is effective totransform at least an outermost portion of polysilicon comprising plug24 to a silicide material 30 from titanium of the TiN_(x) comprisinglayer. Thus, plug 24 now preferably comprises an outermost silicideregion 30. Silicide region 30 preferably comprises TiSi_(y)N_(Z), where“y” is greater than 0 and less than 2, and “z” is less than or equalto 1. The FIGS. 10 and 11 processing also depicts the annealingtransforming at least an outermost portion of the TiN_(x) layer not oversilicon comprising region 24 to stoichiometric TiN. Further, FIGS. 10and 11 depict transformation of only an outermost portion of the TiN_(x)layer over silicon region 24 to TiN, and only an outermost portionthereof not over silicon comprising region 24 to stoichiometric TiN. Inan alternate considered and preferred embodiment, all of the TiN_(x)layer which is not over plug 24 is transformed to stoichiometric TiN,with some stoichiometric TiN remaining over silicide region 30.

Preferred nitrogen containing atmospheres during annealing comprise atleast one of N₂ and NH₃. The annealing preferably comprises rapidthermal processing (RTP) with a temperature ramp rate of at least 50° C.per second. Regardless, the annealing preferably comprises a temperatureof at least 400° C., and more preferably from 400° C. to 750° C.Processing time at the final temperature is preferably from between 20seconds to 100 seconds. In a reduction to practice example, atemperature of 650° C., for 60 seconds in an N₂ comprising atmospherewas utilized. A RTP reduction to practice example is to a temperaturefrom 950° C. to 1000° C.

An example plasma annealing atmosphere comprises nitrogen and hydrogen,for example a combination of N₂ and H₂, and/or NH₃. Example plasmaconditions include using a Applied Materials Centura or other plasmareactor, with plasma power ranging from 100 W to 1500 W, time at from 10seconds to 240 seconds, temperature at from 300° C. to 550° C., pressurefrom 10 mTorr to 10 Torr. Exemplary processing with such parametersusing both N₂ and H₂ comprises flow rates for each gas of from 50 sccmto 100 sccm with argon being provided at from 0 sccm to 500 sccm.

FIGS. 12 and 13 illustrate but one exemplary annealing processing whichmight occur with respect to the alternate substrate 10 a embodiment. Thesame preferred annealing shows TiN_(x) layer 26 a and polysilicon layer25 having been transformed to an outermost stoichiometric TiN layer 32and an innermost silicide layer 34 preferably of the composition asdescribed above. In accordance with an aspect of the alternateembodiment, the annealing transforms at least an outermost portion ofthe TiN_(x) layer to TiN and reacts at least an innermost portion of theTiN_(x) layer with polysilicon of polysilicon comprising layer 25 toform a silicide. Alternately by way of example only, an intermediateTiN_(x) layer or region might also remain (not shown).

Referring to FIGS. 14 and 15, and after the annealing, an elementaltungsten comprising layer 38 (i.e., either tungsten or an alloy oftungsten) is formed on the TiN. Such might occur by conventionalchemical vapor deposition, plasma enhanced chemical vapor deposition,physical vapor deposition or by other methods. An exemplary thickness isfrom 300 Angstroms to 500 Angstroms. In accordance with a preferredaspect of the invention, the above described annealing is conducted insitu in a chamber within which the elemental tungsten comprising layeris also formed by a deposition. An example and preferred thickness forlayer 38 is from 300 Angstroms to 500 Angstroms.

FIGS. 16 and 17 depict a layer 38 deposition in accordance with thealternate embodiment wafer fragment 10 a.

Referring to FIGS. 1 and 18, elemental tungsten comprising layer 38, TiNlayer 32, and any remaining TiN_(x) layer have been patterned,preferably using photoresist and photolithography, into a bit line 40which is in electrical connection with source/drain region 20. FIG. 19depicts alternate corresponding processing in the fabrication of a bitline 40 a whereby the elemental tungsten comprising layer, the TiN, thesilicide and any remaining of the polysilicon comprising layer have beenpatterned into a bit line 40 a in electrical connection withsource/drain diffusion region 20. The X1-X4 section view of the processcorresponding to that of FIG. 18 would be the same as shown in FIG. 15.Likewise, the X1-X4 section view of the process corresponding to that ofFIG. 19 would be the same as shown in FIG. 17. Accordingly, FIG. 18depicts buried bit line memory circuitry wherein a bit line 40 isreceived over insulating layer 22 and contacts outermost silicide region30 of plug 24, and comprises a TiN region and an outer elementaltungsten comprising region. Further, FIG. 19 depicts bit line 40 acomprising an inner silicide region, a TiN comprising mid region, and anouter elemental tungsten comprising region. Further, word line 40 inFIGS. 15 and 18 depict but one exemplary bit line comprising a TiN_(x)region and an outer elemental tungsten comprising region.

Referring to FIG. 20, an insulating layer 44 (i.e., planarized BPSG) isformed over bit line 40 a and remaining portions of substrate 10 a.Storage node/capacitor contacts 46 and 48 are made therethrough andthrough insulating layer 22 to source/drain regions 19 and 21,respectively.

Alternate exemplary processing for fabrication of capacitor structuresare shown with respect to FIGS. 21 and 22. Specifically, FIG. 21 depictsfabrication of capacitors 50 and 52 relative to storage node openings 46and 48. Such could be formed, by example only, by deposition of astorage node layer 54 which is planarized back relative to layer 44 toprovide desired isolated storage nodes. A suitable capacitor dielectriclayer 56 and cell capacitor plate layer 58 could then be depositedthereover.

FIG. 22 depicts plugging of storage node openings 46 and 48 with aconductive plugging material 59. Then, another insulating layer 60,(i.e., BPSG) is formed over the substrate, and container openings 64 areprovided therein. A storage node layer 54, capacitor dielectric layer 56and cell plate layer 58 could then be subsequently formed as shown toproduce capacitors 51 and 53. Regardless, both such embodiments depictformation of a capacitor received at least partially outward of the bitline and in electrical connection with one of source/drain regions 19and 21.

The processing and circuitry was described with respect to DRAMcircuitry. However, other memory circuitry and other circuitry are alsocontemplated. For and by way of example only, the processing includesformation of a conductive line which might be other than a bit line.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

What is claimed is:
 1. A method of forming buried bit line memorycircuitry comprising: forming a word line having a pair of opposingsource/drain regions on a substrate; forming a silicon comprising regionover and in electrical connection with one of the pair of source/drainregions; depositing a TiN_(x) comprising layer over the siliconcomprising region, where “x” is greater than 0 and less than 1;annealing the TiN_(x) comprising layer in a nitrogen and hydrogen plasmaatmosphere effective to transform at least an outermost portion of theTiN_(x) layer over the silicon comprising region to TiN; after theannealing, forming an elemental tungsten comprising layer on the TiN andpatterning at least the elemental tungsten comprising layer, the TiN,and any remaining TiN_(x) layer into a bit line in electrical connectionwith the one source/drain region; and forming a capacitor received atleast partially outwardly of the bit line and in electrical connectionwith another of the pair of source/drain regions.
 2. The method of claim1 wherein the annealing reacts an innermost portion of the TiN_(x) layerwith silicon of the silicon comprising region to form a silicide.
 3. Themethod of claim 2 wherein the silicide comprises TiSi_(y)N_(Z), where“y” is greater than 0 and less than 2, and “z” is less than or equalto
 1. 4. The method of claim 1 wherein the annealing transforms at leastan outermost portion of the TiN_(x) layer not over the siliconcomprising region to TiN.
 5. The method of claim 1 wherein the annealingtransforms only an outermost portion of the TiN_(x) comprising layerover the silicon region to TiN, and at least an outermost portion of theTiN_(x) layer not over the silicon comprising region to TiN.
 6. Themethod of claim 1 wherein the silicon comprising region comprisespolysilicon.
 7. The method of claim 1 wherein “x” ranges from 0.2 to0.8.
 8. The method of claim 1 wherein “x” ranges from 0.5 to 0.6.
 9. Themethod of claim 1 wherein the plasma atmosphere comprises N₂ and H₂. 10.The method of claim 1 wherein the plasma atmosphere comprises NH₃. 11.The method of claim 1 wherein the annealing is conducted in situ in achamber within which the elemental tungsten comprising layer is formedby depositing.
 12. A method of forming buried bit line memory circuitrycomprising: forming a word line having a pair of opposing source/drainregions on a substrate; forming an insulating layer over the word lineand the source/drain regions; forming a polysilicon comprising plug inelectrical connection with one of the pair of source/drain regionsthrough the insulating layer; depositing a TiN_(x) comprising layer overthe insulating layer and the polysilicon comprising plug, where “x” isgreater than 0 and less than 1; annealing the TiN_(x) comprising layerin a nitrogen and hydrogen plasma atmosphere effective to transform atleast an outermost portion of the TiN_(x) layer to TiN and at least anoutermost portion of the polysilicon comprising plug to a silicide fromtitanium of the TiN_(x) comprising layer; after the annealing, formingan elemental tungsten comprising layer on the TiN and patterning theelemental tungsten comprising layer, the TiN, and any remaining TiN_(x)layer into a bit line in electrical connection with the one source/drainregion; and forming a capacitor received at least partially outwardly ofthe bit line and in electrical connection with another of the pair ofsource/drain regions.
 13. The method of claim 12 wherein the silicidecomprises TiSi_(y)N_(Z), where “y” is greater than 0 and less than 2,and “z” is less than or equal to
 1. 14. The method of claim 12 wherein“x” ranges from 0.2 to 0.8.
 15. The method of claim 12 wherein “x”ranges from 0.5 to 0.6.
 16. The method of claim 12 wherein the plasmaatmosphere comprises N₂ and H₂.
 17. The method of claim 12 wherein theplasma atmosphere comprises NH₃.
 18. The method of claim 12 wherein theannealing is conducted in situ in a chamber within which the elementaltungsten comprising layer is formed by depositing.
 19. A method offorming buried bit line memory circuitry comprising: forming a word linehaving a pair of opposing source/drain regions on a substrate; formingan insulating layer over the word line and the source/drain regions;forming a polysilicon comprising plug in electrical connection with oneof the pair of source/drain regions through the insulating layer;depositing a polysilicon comprising layer over the insulating layer andthe polysilicon comprising plug; depositing a TiN_(x) comprising layerover the polysilicon comprising layer, where “x” is greater than 0 andless than 1; annealing the TiN_(x) comprising layer in a nitrogen andhydrogen plasma atmosphere effective to transform at least an outermostportion of the TiN_(x) layer to TiN and react at least an innermostportion of the TiN_(x) layer with polysilicon of the polysiliconcomprising layer to form a silicide; after the annealing, forming anelemental tungsten comprising layer on the TiN and patterning theelemental tungsten comprising layer, the TiN, the silicide and anyremaining of the polysilicon comprising layer into a bit line inelectrical connection with the one source/drain region; and forming acapacitor received at least partially outwardly of the bit line and inelectrical connection with another of the pair of source/drain regions.20. The method of claim 19 wherein the silicide comprises TiSi_(y)N_(Z),where “y” is greater than 0 and less than 2, and “z” is less than orequal to
 1. 21. The method of claim 19 wherein “x” ranges from 0.2 to0.8.
 22. The method of claim 19 wherein “x” ranges from 0.5 to 0.6. 23.The method of claim 19 wherein the plasma atmosphere comprises N₂ andH₂.
 24. The method of claim 19 wherein the plasma atmosphere comprisesNH₃.
 25. The method of claim 19 wherein the annealing is conducted insitu in a chamber within which the elemental tungsten comprising layeris formed by depositing.
 26. A semiconductor processing method offorming a conductive line comprising: forming a silicon comprisingregion over a substrate; depositing a TiN_(x) comprising layer over thesilicon comprising region, where “x” is greater than 0 and less than 1;annealing the TiN_(x) comprising layer in a nitrogen and hydrogen plasmaatmosphere effective to transform at least an outermost portion of theTiN_(x) layer over the silicon comprising region to TiN; after theannealing, forming an elemental tungsten comprising layer on the TiN andpatterning at least the elemental tungsten comprising layer, the TiN,and any remaining TiN_(x) layer into a conductive line.
 27. The methodof claim 26 wherein the annealing reacts an innermost portion of theTiN_(x) layer with silicon of the silicon comprising region to form asilicide.
 28. The method of claim 27 wherein the silicide comprisesTiSi_(y)N_(Z), where “y” is greater than 0 and less than 2, and “z” isless than or equal to
 1. 29. The method of claim 26 wherein theannealing transforms at least an outermost portion of the TiN_(x) layernot over the silicon comprising region to TiN.
 30. The method of claim26 wherein the annealing transforms only an outermost portion of theTiN_(x) comprising layer over the silicon region to TiN, and at least anoutermost portion of the TiN_(x) layer not over the silicon comprisingregion to TiN.
 31. The method of claim 26 wherein “x” ranges from 0.2 to0.8.
 32. The method of claim 26 wherein the plasma atmosphere comprisesN₂ and H₂.
 33. The method of claim 26 wherein the plasma atmospherecomprises NH₃.
 34. The method of claim 26 wherein the annealing isconducted in situ in a chamber within which the elemental tungstencomprising layer is formed by depositing.